DocumentCode
310039
Title
Hydrogenation of Schottky-barrier multiple-quantum-well modulator structures
Author
Woodward, T.K. ; Cunningham, J.E. ; Jan, W.Y. ; Kastalsky, A.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
87
Abstract
We describe the first investigations of hydrogenation on multiple-quantum-well (MQW) optical modulator structures. In particular, we have studied Schottky-barrier modulator structures. We find that hydrogen has a marked beneficial effect on the photocurrent collection efficiency of Schottky-barrier-based MQW modulators. Further, room temperature photoluminescence intensity of our samples was 25 times larger with hydrogen exposure. Both of these results suggest that carrier lifetimes in our samples are increased by hydrogenation, indicating that deep-level non-radiative recombination centers are passivated by hydrogenation. Further, we find that shallow-donor levels are also passivated
Keywords
electro-optical modulation; H2; Schottky-barrier multiple-quantum-well modulator; carrier lifetime; deep-level nonradiative recombination centers; hydrogenation; optical modulator; passivation; photocurrent collection efficiency; shallow-donor levels; Annealing; Buffer layers; Chromium; Etching; Hydrogen; Optical buffering; Optical modulation; Photoconductivity; Plasma temperature; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586905
Filename
586905
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