• DocumentCode
    310039
  • Title

    Hydrogenation of Schottky-barrier multiple-quantum-well modulator structures

  • Author

    Woodward, T.K. ; Cunningham, J.E. ; Jan, W.Y. ; Kastalsky, A.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    87
  • Abstract
    We describe the first investigations of hydrogenation on multiple-quantum-well (MQW) optical modulator structures. In particular, we have studied Schottky-barrier modulator structures. We find that hydrogen has a marked beneficial effect on the photocurrent collection efficiency of Schottky-barrier-based MQW modulators. Further, room temperature photoluminescence intensity of our samples was 25 times larger with hydrogen exposure. Both of these results suggest that carrier lifetimes in our samples are increased by hydrogenation, indicating that deep-level non-radiative recombination centers are passivated by hydrogenation. Further, we find that shallow-donor levels are also passivated
  • Keywords
    electro-optical modulation; H2; Schottky-barrier multiple-quantum-well modulator; carrier lifetime; deep-level nonradiative recombination centers; hydrogenation; optical modulator; passivation; photocurrent collection efficiency; shallow-donor levels; Annealing; Buffer layers; Chromium; Etching; Hydrogen; Optical buffering; Optical modulation; Photoconductivity; Plasma temperature; Quantum well devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586905
  • Filename
    586905