A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

Light emitting diodes (LEDs) and superluminescent diodes (SLDs) with broad spectral widths have been fabricated by a variety of techniques. Recently, a selective area growth technique has been reported that utilizes growth inhibition from a silicon dioxide mask to control the quantum well (QW) thickness and thus the emission wavelength. In this talk, we report the fabrication of a broad spectrum strained layer InGaAs-GaAs-AlGaAs single quantum well edge emitting LED grown by conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using selective-area growth and regrowth. In the selective-area epitaxy process, a patterned silicon dioxide mask is used to enhance the growth rate in unmasked areas of a substrate. The extent of growth rate enhancement is dependent on the relative area of masked and unmasked regions. With this in mind, we fabricated a dual stripe tapered oxide width mask pattern for the active region regrowth, in order to produce a device with a continuous variation in QW thickness along its length