• DocumentCode
    3100532
  • Title

    Absorption in biased AlxGa1−xN/GaN quantum wells

  • Author

    Chou, HungChi ; Anwar, Mehdi ; Manzur, Tariq ; Zeller, John ; Sood, Ashok K.

  • Author_Institution
    Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the calculated absorption coefficient in AlxGa1-xN/GaN quantum well. The calculations account for spontaneous and piezoelectric polarizations and strain induced modifications in band gap and band offsets. The dependence of absorption coefficient and carrier life time on the variations of applied voltage, energy and Al-mole fraction is report in the presence of strain.
  • Keywords
    III-V semiconductors; absorption coefficients; aluminium compounds; carrier lifetime; dielectric polarisation; energy gap; gallium compounds; piezoelectric semiconductors; piezoelectricity; semiconductor quantum wells; Al-mole fraction; AlxGa1-xN-GaN; absorption coefficient; applied voltage; band gap; band offsets; biased quantum wells; carrier lifetime; piezoelectric polarization; spontaneous polarization; strain induced modifications; Absorption; Charge carrier processes; Educational institutions; Gallium nitride; Materials; USA Councils; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135311
  • Filename
    6135311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3100532