DocumentCode
3100721
Title
Heavily silicon doped lattice matched InGaAIAs/lnP epilayers grown by molecular beam epitaxy
Author
Akkipeddi, R. ; Soo Jin Chua
fYear
1995
fDate
10-14 July 1995
Firstpage
47
Keywords
Effective mass; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical polarization; Potential well; Quantum dots; Shape; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-2400-5
Type
conf
DOI
10.1109/CLEOPR.1995.521270
Filename
521270
Link To Document