DocumentCode
3100956
Title
A physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors based on hydrodynamic simulation
Author
Ge, Ji ; Liu, Hong-Gang ; Cao, Yu-Xiong ; Su, Yong-Bo ; Jin, Zhi
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
Currently the most popular HBT model are unscalable and cannot be used for device structure optimization which must primarily be calibrated with already fabricated and measured devices. To overcome the problem, a physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed in this paper.
Keywords
III-V semiconductors; circuit optimisation; gallium arsenide; heterojunction bipolar transistors; hydrodynamics; indium compounds; InGaAs-InP; device structure optimization; double heterojunction bipolar transistor; hydrodynamic simulation; layer structure optimization; layer structure scaling; physical model; Cutoff frequency; Double heterojunction bipolar transistors; Equations; Hydrodynamics; Indium gallium arsenide; Indium phosphide; Mathematical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135330
Filename
6135330
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