Title :
Energy band diagram of metal-oxide-semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric
Author :
Cheng, Chin-Lung ; Chang-Liao, Kuei-Shu
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Formosa Univ., Huwei, Taiwan
Abstract :
The present study gives an important message that an MOS capacitor with HfLaTaO/HfSiO stacked dielectric and EOT of 1.0 nm can be demonstrated. Energy band diagram of MOS capacitor with Ta/HfLaTaO/HfSiO/P-Si(100) structure was determined by the measurement of Φηι of Ta deposited on HfLaTaO dielectric, the Egopt of HfLaTaO dielectric, and the Φβ at Ta/HfLaTaO interface.
Keywords :
MOS capacitors; band structure; hafnium compounds; high-k dielectric thin films; lanthanum compounds; silicon compounds; tantalum compounds; HfLaTaO-HfSiO; MOS capacitor; energy band diagram; metal-oxide-semiconductor capacitor; stacked high-k dielectric; Dielectric measurements; Dielectrics; Electric fields; Logic gates; MOS capacitors; Silicon; Voltage measurement;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135334
