Title :
High-speed nin-waveguide modulator and switch
Author :
Jäger, D. ; Stöhr, A. ; Humbach, O.
Author_Institution :
Fachgebiet Optoelektronik, Duisburg Univ., Germany
fDate :
31 Oct-3 Nov 1994
Abstract :
Waveguide nin-modulators and switches using strained InGaAs/GaAs MQW active layers are investigated with emphasis on high-speed modulation and efficient switching properties at wavelengths of about 0.98 μm. Based upon an nin-cross-section and a coplanar Schottky diode design we realized high-speed absorption modulators and digital optical switches utilizing both absorption edge shift and field-induced waveguiding due to the quantum-confined Stark effect in the depletion region
Keywords :
indium compounds; 0.98 micron; InGaAs-GaAs; absorption edge shift; coplanar Schottky diode; digital optical switch; field-induced waveguiding; high-speed absorption modulator; nin-waveguide; quantum-confined Stark effect; strained InGaAs/GaAs MQW; Absorption; Digital modulation; Gallium arsenide; Indium gallium arsenide; Optical design; Optical modulation; Optical switches; Optical waveguides; Quantum well devices; Schottky diodes;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586980
