DocumentCode
310106
Title
High-speed nin-waveguide modulator and switch
Author
Jäger, D. ; Stöhr, A. ; Humbach, O.
Author_Institution
Fachgebiet Optoelektronik, Duisburg Univ., Germany
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
236
Abstract
Waveguide nin-modulators and switches using strained InGaAs/GaAs MQW active layers are investigated with emphasis on high-speed modulation and efficient switching properties at wavelengths of about 0.98 μm. Based upon an nin-cross-section and a coplanar Schottky diode design we realized high-speed absorption modulators and digital optical switches utilizing both absorption edge shift and field-induced waveguiding due to the quantum-confined Stark effect in the depletion region
Keywords
indium compounds; 0.98 micron; InGaAs-GaAs; absorption edge shift; coplanar Schottky diode; digital optical switch; field-induced waveguiding; high-speed absorption modulator; nin-waveguide; quantum-confined Stark effect; strained InGaAs/GaAs MQW; Absorption; Digital modulation; Gallium arsenide; Indium gallium arsenide; Optical design; Optical modulation; Optical switches; Optical waveguides; Quantum well devices; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586980
Filename
586980
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