Title :
GIDL and F-N tunneling current correction on charge pumping techniques for profiling traps in high-k gated MOSFETs
Author :
Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Tsai, Fu-Huan ; Tsao, Che-Hao ; Wang, Tien-Ko ; Hou, Fu-Chung ; Hsu, Yao-Tung
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In summary, the impact of parasitic leakage component (including GIDL and F-N gate leakage current) on CP measurements has been investigated and two methods were proposed to overcome this issue, based on the eliminating of static leakage current. The lateral and depth profiles of trap distribution in high-k MOSFETs are extracted by the corrected CP techniques.
Keywords :
MOSFET; high-k dielectric thin films; leakage currents; CP measurements; F-N tunneling current correction; charge pumping techniques; depth profiles; gate leakage current; gate-induced-drain-leakage; high-k gated MOSFET; lateral profiles; parasitic leakage component; profiling traps; static leakage current elimination; Current measurement; Frequency measurement; Leakage current; Logic gates; MOSFETs; Tunneling; Voltage measurement;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135335
