• DocumentCode
    310114
  • Title

    Low threshold 1.59 μm vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells

  • Author

    Lin, C.H. ; Chua, C.L. ; Zhua, Z.-H. ; Bhat, Ritesh ; Ejeckam, F.E. ; Wu, T.C. ; Lo, Y.H.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    252
  • Abstract
    We demonstrated, for the first time, long wavelength InGaAs/InGaAsP VCSELs with strain-compensated multiple quantum wells. Record low threshold pumping power and high To have been achieved. The exceedingly high optical gain and the capability of growing many wells relax the stringent requirement on mirror reflectivity making strain-compensated multiple quantum wells attractive for long wavelength VC-SELs
  • Keywords
    quantum well lasers; 1.59 micron; InGaAs-InGaAsP; characteristic temperature; long wavelength VCSELs; mirror reflectivity; optical gain; strain-compensated multiple quantum wells; threshold pumping power; vertical-cavity surface-emitting lasers; Indium gallium arsenide; Mirrors; Optical pumping; Optical recording; Optical surface waves; Pump lasers; Quantum well lasers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586988
  • Filename
    586988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310114