Title :
Low threshold 1.59 μm vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells
Author :
Lin, C.H. ; Chua, C.L. ; Zhua, Z.-H. ; Bhat, Ritesh ; Ejeckam, F.E. ; Wu, T.C. ; Lo, Y.H.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We demonstrated, for the first time, long wavelength InGaAs/InGaAsP VCSELs with strain-compensated multiple quantum wells. Record low threshold pumping power and high To have been achieved. The exceedingly high optical gain and the capability of growing many wells relax the stringent requirement on mirror reflectivity making strain-compensated multiple quantum wells attractive for long wavelength VC-SELs
Keywords :
quantum well lasers; 1.59 micron; InGaAs-InGaAsP; characteristic temperature; long wavelength VCSELs; mirror reflectivity; optical gain; strain-compensated multiple quantum wells; threshold pumping power; vertical-cavity surface-emitting lasers; Indium gallium arsenide; Mirrors; Optical pumping; Optical recording; Optical surface waves; Pump lasers; Quantum well lasers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586988
