Title :
Periodic gain surface-emitting lasers with low threshold current densities
Author :
Yoo, Byueng-Su ; Park, Hyo-Hoon ; Lee, El-Hang
Author_Institution :
Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
31 Oct-3 Nov 1994
Abstract :
Threshold current densities as low as 370-440 A/cm2 and differential quantum efficiencies of 26-32% have been obtained for air-post index-guided bottom-emitting InGaAs VCSELs using a periodic gain 2λ active structure. The low threshold current densities with high differential quantum efficiencies suggest that the periodic gain active structure is useful in improving threshold characteristics of VCSELs without deteriorating output power characteristics
Keywords :
surface emitting lasers; 26 to 32 percent; InGaAs; air-post index-guided bottom-emitting VCSELs; differential quantum efficiencies; output power; periodic gain active structure; surface-emitting lasers; threshold current densities; Gallium arsenide; Gold; Laser modes; Periodic structures; Plugs; Power generation; Surface emitting lasers; Surface resistance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586989
