Title : 
Top surface-emitting laser fabricated by dual implantation using tungsten wire as a mask
         
        
            Author : 
Du, G. ; Lin, Y. ; Jiang, X. ; Gao, D.
         
        
            Author_Institution : 
Jilin Univ., Changchun, China
         
        
        
        
            fDate : 
31 Oct-3 Nov 1994
         
        
            Abstract : 
Vertical cavity surface emitting lasers (VCSEL) have developed rapidly during the past few years. However, most of the device fabrication processes are highly complex. Recently, we designed and fabricated a new structure of the vertical-cavity top surface-emitting laser by dual implantation using a tungsten wire as the mask. This simplifies the fabrication process
         
        
            Keywords : 
ion implantation; W; dual implantation; fabrication; mask; tungsten wire; vertical-cavity top surface-emitting laser; Gallium arsenide; Molecular beam epitaxial growth; Nonhomogeneous media; Optical design; Optical device fabrication; Power generation; Surface emitting lasers; Tungsten; Vertical cavity surface emitting lasers; Wire;
         
        
        
        
            Conference_Titel : 
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
         
        
            Conference_Location : 
Boston, MA
         
        
            Print_ISBN : 
0-7803-1470-0
         
        
        
            DOI : 
10.1109/LEOS.1994.586991