A novel Dual-Control-Gate Floating Gate Transistor used in VCO application

Author

Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bergeret, E. ; Bouchakour, R.

Author_Institution

ST-Microelectron., Rousset, France

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This block is intended to provide a new vision of design and develop new functionalities. This device is developed to be fully compliant with Non Volatile Memory (NVM) process [1]. DCG-FGT device has been successfully implemented on a 0.13μm embedded NVM CMOS technology. The DCG-FGT is shown in Fig. 1. A first layer of poly-silicon forms the floating gate above the bulk while a second poly-silicon layer is used to implement two adjacent control gates namely (G1) and (G2).

Keywords

CMOS memory circuits; MOSFET; random-access storage; voltage-controlled oscillators; DCG-FGT device; MOS device; NVM CMOS technology; VCO application; adjacent control gates; analog design; dual-control-gate floating gate transistor; nonvolatile memory process; polysilicon layer; size 0.13 mum; Frequency control; Integrated circuit modeling; Logic gates; Nonvolatile memory; Threshold voltage; Transistors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135341

Filename

6135341