A novel Doping-less Bipolar Transistor with Schottky Collector

Author

Nadda, Kanika ; Kumar, M. Jagadesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Delhi, Delhi, India

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

We propose a new device structure named as Doping-less Bipolar Transistor (DBT) with Schottky Collector in this paper. This DBT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, required for post ion-implantation of the base and the emitter regions of a bipolar device, which can create complications while integrating the bipolar process with the CMOS process. DBT has metal electrodes with different work-functions (φm,E <; φsi and cpm,B >; φsi ) [1], to induce (i) electrons for forming the emitter region and (ii) holes to form the base region. Due to the absence of doped regions, this device is immune to non-ideal effects such as band-gap narrowing and ionic scattering.

Keywords

CMOS analogue integrated circuits; bipolar transistors; ion implantation; CMOS process; DBT concept; Schottky collector; band-gap narrowing; base region; bipolar process; dopant activation; dopingless bipolar transistor; emitter region; high-thermal budgets; ionic scattering; metal electrodes; post-ion implantation; work-functions; Bipolar transistors; Charge carrier processes; Doping; Electrodes; Metals; Photonic band gap; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135343

Filename

6135343