• DocumentCode
    310122
  • Title

    1.3 μm wavelength, folded-cavity surface-emitting lasers fabricated by CH4/H2 angled facet reactive ion etching

  • Author

    Chao, Chih-Ping ; Shiau, Guang-Jye ; Forrest, Stephen R.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    267
  • Abstract
    Surface-emitting lasers are useful devices for photonic integrated circuits such as optoelectronic transceivers and smart pixels. In this work, we report the fabrication of 1.3 μm wavelength InGaAsP/InP folded-cavity surface-emitting laser (FCSEL) using CH4/H2 45° angled facet reactive ion etching. A 5 μm wide by 550 μm long device has a threshold current of 45 mA, which to our knowledge is the lowest reported to date for 1.3 μm wavelength FCSELs
  • Keywords
    optical fabrication; 1.3 micron; 45 mA; 5 micron; 550 micron; CH4/H2 angled facet reactive ion etching; FCSEL; InGaAs-InP; fabrication; folded-cavity surface-emitting lasers; methane; threshold current; Chaos; Dry etching; Indium phosphide; Scanning probe microscopy; Surface emitting lasers; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586996
  • Filename
    586996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310122