Title :
Characterization of size-controlled ZnO nanorods produced by electrochemical deposition technique
Author :
Orhan, N. ; Baykul, M.C.
Author_Institution :
Phys. Dept., Eskisehir Osmangazi Univ., Eskisehir, Turkey
Abstract :
ZnO nanorods have been grown onto Indium thin Oxide (ITO) coated glass substrates by electrochemical deposition technique using ZnCl2 (0.005 M), KCl (0.1 M), solutions at the bath temperature of 80°C and 5.8 pH value. The seed layers were pre-deposited galvanostatically applying different currents such as -1.0 mA and -2.0 mA and the subsequent ZnO nanorods had been produced using the potentiostatic mode at the potential of -1.0 V. Energy band gaps of ZnO nanorods which were produced using the seed layers at the currents of -1.0 mA and -2.0 mA were 3.52, and 3.60 eV, respectively. On the other hand, the Energy band gap of ZnO nanorods which were produced without using seed layers at the potential of -1.0 V was 3.50 eV. The structure and the surface morphology of ZnO nanorods were studied by x-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). X-ray diffraction results showed that the preferred crystallographic orientation of ZnO nanorods is in the <;0002>; direction. AFM results have shown that surface roughnesses of ZnO nanorods with seed layers at the currents of -1.0 mA and -2.0 mA were 272, and 126 nm, respectively. AFM results also have sown that the surface roughness of ZnO nanorods which were produced without the seed layer was 226 nm. Diameters of hexagons of ZnO nanorods produced with seed layers at the currents of -2.0 and -1.0 mA were determined as 350, and 470 nm, respectively. The diameter of hexagons of ZnO nanorods produced without seed layers was determined as 550 nm from AFM images. The SEM images have shown that the lengths of the ZnO nanorods varied between 1.0 and 2.5 μm.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; crystal orientation; electrodeposition; energy gap; nanofabrication; nanorods; pH; scanning electron microscopy; semiconductor growth; surface morphology; surface roughness; texture; zinc compounds; <;0002>; direction; AFM; SEM; X-ray diffraction; XRD; ZnO; atomic force microscopy; current -1.0 mA to -2.0 mA; electrochemical deposition technique; energy band gaps; galvanostatic predeposition; hexagons; indium thin oxide coated glass substrates; pH; potentiostatic mode; preferred crystallographic orientation; scanning electron microscopy; seed layers; size-controlled nanorods; surface morphology; surface roughness; temperature 80 degC; Photonic band gap; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135347