Title :
InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates
Author :
Mathine, D.L. ; Fathollahnejad, H. ; Droopad, R. ; Daryanani, S. ; Maracas, G.N.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon
Keywords :
quantum well lasers; InGaAs; InGaAs quantum well vertical-cavity surface-emitting lasers; PdGe; Si; integration; low temperature PdGe contacts; silicon substrates; substrate removal; threshold current; Gallium arsenide; Indium gallium arsenide; Optical arrays; Optical surface waves; Quantum well lasers; Silicon; Surface emitting lasers; Thermal conductivity; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587003
