DocumentCode
310141
Title
Recombination, gain and carrier leakage in (AlGa)InP visible lasers
Author
Blood, P. ; Smowton, P.M.
Author_Institution
Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
321
Abstract
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination currents of GaInP lasers have been quantified and the factors which control the optimisation of threshold current at fixed wavelength identified
Keywords
aluminium compounds; (AlGa)InP visible lasers; AlGaInP; carrier leakage; electron hole recombination currents; gain; optimisation; strain; threshold current; Capacitive sensors; Current measurement; Laser theory; Laser transitions; Quantum well lasers; Radiative recombination; Spontaneous emission; Strain measurement; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587023
Filename
587023
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