A new EOT shrinking mechanism in TiN/HfLaON HKMG MOSFET: Experimental and ab-initio study

Author

Liang, Q. ; Xu, Q.X. ; Xu, G.B. ; Zhong, H.C. ; Zhu, H.L. ; Li, J.F. ; Zhao, C. ; Yan, J. ; Chen, D.P. ; Ye, T.C.

Author_Institution

IC Adv. Process R&D Center, Inst. of Microelectron., Beijing, China

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Dramatic EOT shrinking and Vfb increasing were observed when implanting Ga ions into high-k/metal-gate stack. Experiments with different gate-metal thickness, dosages, ion types, and post gate-etch anneal conditions were studied. Elastic dipole theory, for the first time, is proposed and ab-initio simulations were conducted to explain the unexpected trends. This theory offers a good guide to choose plug-in materials for high-k/metal-gate optimization.

Keywords

MOSFET; annealing; gallium; hafnium compounds; ion implantation; lanthanum compounds; titanium alloys; EOT shrinking mechanism; HKMG MOSFET; TiN-HfLaON; ab-initio simulations; elastic dipole theory; gallium ion implantation; gate-metal dosages; gate-metal thickness; high-k-metal-gate optimization; high-k-metal-gate stack; ion types; plug-in materials; post-gate-etch anneal conditions; Atomic clocks; Hafnium compounds; High K dielectric materials; Logic gates; Silicon; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135351

Filename

6135351