Silicidation using nickel and Dysprosium stack on Si(100): NiSi2 formation and impact on Schottky Barrier Height

Author

Lim, Phyllis Shi Ya ; Zhou, Qian ; Chi, Dongzhi ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng, Nat. Univ. of Singapore, Singapore, Singapore

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

NiSi₂ formation was report for the ΦBⁿ reduction for Dy-incorporated Ni silicides. NiSi₂ was found out to be potential contact material for the achievement of low ΦBⁿ in field effect transistors at nm technology nodes (n-FETs). X-ray diffraction (XRD), secondary ions mass spectroscopy (SIMS) depth profile, high-resolution transmission electron microscopy (TEM) were used for analyses.

Keywords

X-ray diffraction; dysprosium; electrical contacts; field effect transistors; nanofabrication; nickel alloys; oxidation; secondary ion mass spectra; silicon; silicon alloys; transmission electron microscopy; NiSi₂-Dy; NiSi₂-Si; SIMS; Schottky barrier height; TEM; X-ray diffraction; XRD; contact material; dysprosium stack; field effect transistors; high-resolution transmission electron microscopy; n-FETs; nanometer technology nodes; secondary ions mass spectroscopy depth profile; silicidation; Educational institutions; FETs; Nickel; Silicidation; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135352

Filename

6135352