DocumentCode :
310144
Title :
Recent developments in SiC-based visible emitters
Author :
Edmond, John A. ; Irvine, Kenneth ; Bulman, Gary ; Kong, H.-S. ; Suvarov, Alexander ; Dmitriev, Vladimir
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Volume :
1
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
327
Abstract :
In recent years, there has been rapidly growing interest and progress in the development of blue and pure green light emitting materials for LED and laser applications. Most recent developments have been reported for the direct bandgap materials, ZnSe and GaN. However, a compatible substrate is needed for nitride-based emitters to become commercially viable. Although less efficient, the commercial viability of SiC-based LEDs has already been proven. This paper reports on the most recent advancements in increasing the performance of blue and green light emitting diodes fabricated in homoepitaxial 6H-SiC and the potential for SiC-nitride based LEDs
Keywords :
silicon compounds; SiC; SiC-GaN; SiC-nitride system; blue LEDs; green LEDs; homoepitaxial 6H-SiC; light emitting diodes; visible emitters; Crystalline materials; DH-HEMTs; Degradation; Gallium nitride; Light emitting diodes; Optical materials; Photonic band gap; Silicon carbide; Substrates; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.587026
Filename :
587026
Link To Document :
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