Title :
The state of the art of group III nitride based light emitters
Author :
Akasaki, I. ; Amano, H.
Author_Institution :
Meijo Univ., Nagoya, Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters
Keywords :
light emitting diodes; conductivity; group III nitrides; heteroepitaxial growth; highly-mismatched substrate; short wavelength light emitters; Conductivity; Light emitting diodes; Lighting control; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587028
