The impact of process parameter variations on the electrical characteristics of a RESURF LDMOS and its compact modeling

In this paper, we have investigated the effect of parameter variations on the electrical characteristics of a RESURF LDMOS. The rate of change in each of the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters has been obtained. Furthermore, a model for the device output characteristics is presented and is verified by numerical simulations. To design a high-frequency high-power transistor, an accurate model for the power transistor is required. Several models for the device output characteristics have been proposed [1-3]. A good model should behave properly in all regions of the transistor operation and include the effects of quasi-saturation, a phenomenon commonly seen in power transistors when operating at high gate voltages. The model used here, also includes effects such as self heating and saturation in the N-Drift region.