• DocumentCode
    310148
  • Title

    Growth and characterization of low threshold-current-density II-VI blue-green laser diodes grown by molecular beam epitaxy

  • Author

    Marshall, T. ; Gaines, J. ; Petruzzello, J. ; Drenten, R. ; Mensz, P. ; Haberem, K. ; Olego, D.

  • Author_Institution
    Philips Lab., Briarcliff Manor, NY, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    334
  • Abstract
    We describe the growth and characterization of Zn1-xMg xSySe1-y/Zn1-uCdu Se-based laser diodes using ZnSeTe graded-gap contacts, and related materials. Contact performance, degradation and defect generation, thermal transport, and life testing are discussed
  • Keywords
    semiconductor lasers; II-VI blue-green laser diodes; Zn1-xMgxSySe1-y/Zn1-uCduSe; ZnMgSSe-ZnCdSe; ZnSeTe; ZnSeTe graded-gap contacts; defect generation; degradation; growth; life testing; molecular beam epitaxy; thermal transport; threshold-current-density; Contacts; Diode lasers; Laboratories; Lattices; Molecular beam epitaxial growth; Optical refraction; Photonic band gap; Substrates; Threshold current; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.587030
  • Filename
    587030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310148