• DocumentCode
    3101562
  • Title

    An introduction to the evaluation of the effects of high power microwave signals on signaling systems

  • Author

    Dilli, Zeynep ; Seekhao, Nuttiiya ; Rodgers, John C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    As microelectronic technology progresses, the vulnerabilities of different circuit types to various physical effects also shifts with the integrated circuit (IC) size, materials, specific circuit design and similar factors. At the University of Maryland, a systematic study was undertaken on the effects of high-power microwave (HPM) excitation on IC behavior, which demonstrated the wide variety of effects of HPM coupling into the signal or power traces of an IC, such as bit errors, unwanted bias level changes, and increased power consumption [1,2]. We are working towards assembling a knowledge base on the frequency and power ranges of susceptibility for different families of circuits. In this present work we study “chip-to-chip” board- or mainframe-scale signaling schemes between ICs. Here we compare the HPM effect vulnerabilities of single-ended (SE) and low-voltage differential signaling (LVDS).
  • Keywords
    integrated circuit design; microwave integrated circuits; HPM; IC; LVDS; bit error; circuit design; high power microwave signals; integrated circuit; low-voltage differential signaling systems; power consumption; Educational institutions; Microwave integrated circuits; Radio frequency; Receivers; Transmitters; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135358
  • Filename
    6135358