DocumentCode
3101562
Title
An introduction to the evaluation of the effects of high power microwave signals on signaling systems
Author
Dilli, Zeynep ; Seekhao, Nuttiiya ; Rodgers, John C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
As microelectronic technology progresses, the vulnerabilities of different circuit types to various physical effects also shifts with the integrated circuit (IC) size, materials, specific circuit design and similar factors. At the University of Maryland, a systematic study was undertaken on the effects of high-power microwave (HPM) excitation on IC behavior, which demonstrated the wide variety of effects of HPM coupling into the signal or power traces of an IC, such as bit errors, unwanted bias level changes, and increased power consumption [1,2]. We are working towards assembling a knowledge base on the frequency and power ranges of susceptibility for different families of circuits. In this present work we study “chip-to-chip” board- or mainframe-scale signaling schemes between ICs. Here we compare the HPM effect vulnerabilities of single-ended (SE) and low-voltage differential signaling (LVDS).
Keywords
integrated circuit design; microwave integrated circuits; HPM; IC; LVDS; bit error; circuit design; high power microwave signals; integrated circuit; low-voltage differential signaling systems; power consumption; Educational institutions; Microwave integrated circuits; Radio frequency; Receivers; Transmitters; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135358
Filename
6135358
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