• DocumentCode
    3101636
  • Title

    A 1.8 ns access, 550 MHz 4.5 Mb CMOS SRAM

  • Author

    Nambu, H. ; Kanetani, K. ; Yamasaki, K. ; Higeta, K. ; Usami, M. ; Kusunoki, T. ; Yamaguchi, K. ; Homma, N.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • fYear
    1998
  • fDate
    5-7 Feb. 1998
  • Firstpage
    360
  • Lastpage
    361
  • Abstract
    High-speed, high-density 4-4.5Mb CMOS cache SRAMs do not have speed comparable to that of a 4.5Mb BiCMOS SRAM. This 4.5Mb CMOS SRAM has access time equivalent to that of a BiCMOS SRAM. Key techniques for achieving this speed are a decoder using source-coupled-logic (SCL) circuits combined with reset circuits, a sense amplifier with nMOS source followers, and a sense-amplifier activation-pulse generator that uses a duplicate memory-cell array.
  • Keywords
    CMOS memory circuits; SRAM chips; cache storage; cellular arrays; decoding; 1.8 ns; 4.5 Mbit; 550 MHz; CMOS; access time; cache SRAMs; duplicate memory-cell array; nMOS source followers; reset circuits; sense amplifier; sense-amplifier activation-pulse generator; source-coupled-logic; BiCMOS integrated circuits; Clocks; Decoding; Delay effects; MOS devices; Power dissipation; Pulse amplifiers; Pulse generation; Random access memory; Space vector pulse width modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-4344-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.1998.672529
  • Filename
    672529