• DocumentCode
    3101694
  • Title

    Transient thermal imaging of pulsed-operation superlattice micro-refrigerators

  • Author

    Christofferson, J. ; Ezzahri, Y. ; Maize, K. ; Shakouri, A.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California Santa Cruz, Santa Cruz, CA
  • fYear
    2009
  • fDate
    15-19 March 2009
  • Firstpage
    45
  • Lastpage
    49
  • Abstract
    Thermoreflectance thermal imaging is a proven method for obtaining quantitative temperature maps of active semiconductor devices in the nanometer to millimeter size. The resolution of such images obtained using a charge coupled device (CCD) based thermoreflectance system in a reasonable time, has been shown to be 200 nanometer spatial (visible light diffraction limit), 0.1 K temperature sensitivity, and 10 microsecond temporal. We show an improved method for obtaining thermal transient temperature maps with 100 nanosecond resolution, and obtain results on SiGe based superlattice micro-cooler devices of different sizes. The results, previously predicted but not measured, indicate that under moderate current value, in pulsed-operation, the microrefrigerator device can momentarily cool, even though steady state measurements show heating.
  • Keywords
    Ge-Si alloys; infrared imaging; micromechanical devices; semiconductor devices; semiconductor superlattices; thermal management (packaging); thermoreflectance; transients; SiGe; charge coupled device based thermoreflectance system; microrefrigerator device; nanosecond resolution; pulsed-operation superlattice microrefrigerators; superlattice microcooler devices; thermal quadrupole method; thermal transient temperature maps; thermoreflectance thermal imaging; transient thermal imaging; Current measurement; Millimeter wave devices; Nanoscale devices; Optical imaging; Pulse measurements; Semiconductor devices; Semiconductor superlattices; Spatial resolution; Temperature sensors; Thermoreflectance imaging; Microrefrigerator; Thermal Imaging; Thermal Quadropole Method; Thermoreflectance; Transient Thermal Imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4244-3664-4
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2009.4810741
  • Filename
    4810741