DocumentCode
3101694
Title
Transient thermal imaging of pulsed-operation superlattice micro-refrigerators
Author
Christofferson, J. ; Ezzahri, Y. ; Maize, K. ; Shakouri, A.
Author_Institution
Dept. of Electr. Eng., Univ. of California Santa Cruz, Santa Cruz, CA
fYear
2009
fDate
15-19 March 2009
Firstpage
45
Lastpage
49
Abstract
Thermoreflectance thermal imaging is a proven method for obtaining quantitative temperature maps of active semiconductor devices in the nanometer to millimeter size. The resolution of such images obtained using a charge coupled device (CCD) based thermoreflectance system in a reasonable time, has been shown to be 200 nanometer spatial (visible light diffraction limit), 0.1 K temperature sensitivity, and 10 microsecond temporal. We show an improved method for obtaining thermal transient temperature maps with 100 nanosecond resolution, and obtain results on SiGe based superlattice micro-cooler devices of different sizes. The results, previously predicted but not measured, indicate that under moderate current value, in pulsed-operation, the microrefrigerator device can momentarily cool, even though steady state measurements show heating.
Keywords
Ge-Si alloys; infrared imaging; micromechanical devices; semiconductor devices; semiconductor superlattices; thermal management (packaging); thermoreflectance; transients; SiGe; charge coupled device based thermoreflectance system; microrefrigerator device; nanosecond resolution; pulsed-operation superlattice microrefrigerators; superlattice microcooler devices; thermal quadrupole method; thermal transient temperature maps; thermoreflectance thermal imaging; transient thermal imaging; Current measurement; Millimeter wave devices; Nanoscale devices; Optical imaging; Pulse measurements; Semiconductor devices; Semiconductor superlattices; Spatial resolution; Temperature sensors; Thermoreflectance imaging; Microrefrigerator; Thermal Imaging; Thermal Quadropole Method; Thermoreflectance; Transient Thermal Imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE
Conference_Location
San Jose, CA
ISSN
1065-2221
Print_ISBN
978-1-4244-3664-4
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2009.4810741
Filename
4810741
Link To Document