DocumentCode :
3101694
Title :
Transient thermal imaging of pulsed-operation superlattice micro-refrigerators
Author :
Christofferson, J. ; Ezzahri, Y. ; Maize, K. ; Shakouri, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of California Santa Cruz, Santa Cruz, CA
fYear :
2009
fDate :
15-19 March 2009
Firstpage :
45
Lastpage :
49
Abstract :
Thermoreflectance thermal imaging is a proven method for obtaining quantitative temperature maps of active semiconductor devices in the nanometer to millimeter size. The resolution of such images obtained using a charge coupled device (CCD) based thermoreflectance system in a reasonable time, has been shown to be 200 nanometer spatial (visible light diffraction limit), 0.1 K temperature sensitivity, and 10 microsecond temporal. We show an improved method for obtaining thermal transient temperature maps with 100 nanosecond resolution, and obtain results on SiGe based superlattice micro-cooler devices of different sizes. The results, previously predicted but not measured, indicate that under moderate current value, in pulsed-operation, the microrefrigerator device can momentarily cool, even though steady state measurements show heating.
Keywords :
Ge-Si alloys; infrared imaging; micromechanical devices; semiconductor devices; semiconductor superlattices; thermal management (packaging); thermoreflectance; transients; SiGe; charge coupled device based thermoreflectance system; microrefrigerator device; nanosecond resolution; pulsed-operation superlattice microrefrigerators; superlattice microcooler devices; thermal quadrupole method; thermal transient temperature maps; thermoreflectance thermal imaging; transient thermal imaging; Current measurement; Millimeter wave devices; Nanoscale devices; Optical imaging; Pulse measurements; Semiconductor devices; Semiconductor superlattices; Spatial resolution; Temperature sensors; Thermoreflectance imaging; Microrefrigerator; Thermal Imaging; Thermal Quadropole Method; Thermoreflectance; Transient Thermal Imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
978-1-4244-3664-4
Electronic_ISBN :
1065-2221
Type :
conf
DOI :
10.1109/STHERM.2009.4810741
Filename :
4810741
Link To Document :
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