DocumentCode
3101728
Title
Isothermal versus standard wafer electromigration test for the characterization of metal systems
Author
Brisbin, Dougas ; Turner, Timothy
Author_Institution
Keithley Instrum. Inc., Santa Clara, CA, USA
fYear
1997
fDate
13-16 Oct 1997
Firstpage
136
Lastpage
137
Abstract
The isothermal electromigration test has recently been introduced as a potential alternative to the SWEAT technique. In the isothermal test, the stress current is adjusted in a feedback loop so that a constant metal line temperature is maintained. This differs from the SWEAT test, where the mean time to failure (MTF) as predicted by Black´s equation is the control parameter. Once at the control temperature, the isothermal test can utilize three alternative stress modes: constant power, constant current or constant resistance (temperature). The isothermal test has several important advantages, including: (1) simplicity of implementation; (2) line temperature is directly controlled, so it is easier to avoid the bulk diffusion region; (3) algorithm does not require empirical adjustment of acceleration factors; (4) alternative stress modes are available to optimize performance. The purpose of this paper is to compare the isothermal and SWEAT tests experimentally in terms of MTF and standard deviation, and to evaluate the three different isothermal test modes of constant power, constant current or constant resistance
Keywords
electric current control; electromigration; failure analysis; feedback; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; temperature control; Black´s equation; SWEAT test; acceleration factors; bulk diffusion region; constant current stress mode; constant metal line temperature; constant power stress mode; constant resistance stress mode; control temperature; feedback loop; isothermal electromigration test; isothermal test; isothermal test modes; line temperature control; mean time to failure; metal system characterisation; standard deviation; standard wafer electromigration test; stress current; test performance optimization; Current density; Current measurement; Electromigration; Isothermal processes; Life testing; Measurement standards; Measurement uncertainty; Stress; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-4205-4
Type
conf
DOI
10.1109/IRWS.1997.660308
Filename
660308
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