DocumentCode :
3101728
Title :
Isothermal versus standard wafer electromigration test for the characterization of metal systems
Author :
Brisbin, Dougas ; Turner, Timothy
Author_Institution :
Keithley Instrum. Inc., Santa Clara, CA, USA
fYear :
1997
fDate :
13-16 Oct 1997
Firstpage :
136
Lastpage :
137
Abstract :
The isothermal electromigration test has recently been introduced as a potential alternative to the SWEAT technique. In the isothermal test, the stress current is adjusted in a feedback loop so that a constant metal line temperature is maintained. This differs from the SWEAT test, where the mean time to failure (MTF) as predicted by Black´s equation is the control parameter. Once at the control temperature, the isothermal test can utilize three alternative stress modes: constant power, constant current or constant resistance (temperature). The isothermal test has several important advantages, including: (1) simplicity of implementation; (2) line temperature is directly controlled, so it is easier to avoid the bulk diffusion region; (3) algorithm does not require empirical adjustment of acceleration factors; (4) alternative stress modes are available to optimize performance. The purpose of this paper is to compare the isothermal and SWEAT tests experimentally in terms of MTF and standard deviation, and to evaluate the three different isothermal test modes of constant power, constant current or constant resistance
Keywords :
electric current control; electromigration; failure analysis; feedback; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; temperature control; Black´s equation; SWEAT test; acceleration factors; bulk diffusion region; constant current stress mode; constant metal line temperature; constant power stress mode; constant resistance stress mode; control temperature; feedback loop; isothermal electromigration test; isothermal test; isothermal test modes; line temperature control; mean time to failure; metal system characterisation; standard deviation; standard wafer electromigration test; stress current; test performance optimization; Current density; Current measurement; Electromigration; Isothermal processes; Life testing; Measurement standards; Measurement uncertainty; Stress; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4205-4
Type :
conf
DOI :
10.1109/IRWS.1997.660308
Filename :
660308
Link To Document :
بازگشت