DocumentCode
3101786
Title
High power CMOS circuit with LDMOSFET
Author
Lee, Chan-Soo ; Gendensuren, Munkhsuld ; Cui, Zhi-Yuan ; Lee, Kie-Young ; Kim, Nam-Soo
Author_Institution
Dept. of ECE, Chungbuk Nat. Univ., Cheongju, South Korea
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
High power device has numerous applications in display and communication systems. LDMOSFET (lateral double-diffused MOSFET) is suitable for these applications because of their high blocking voltage, low on-resistance, and high frequency performance. The basic operation of LDMOSFET [1-2] is similar to that of any MOSFET. However, the drain-source blocking voltage is in the range of 100 volts, and the current driving capability of this device is usually high.
Keywords
CMOS integrated circuits; MOSFET; LDMOSFET; communication systems; current driving capability; drain-source blocking voltage; high frequency performance; high power CMOS circuit; lateral double-diffused MOSFET; low on-resistance; voltage 100 V; CMOS integrated circuits; Doping; Driver circuits; Educational institutions; Inverters; Logic gates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135373
Filename
6135373
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