High performance tunnel field effect transistor with a tri-material-gate structure

Recently tunnel field effect transistors (TFETs) have been extensively investigated due to the ability to suppress the short channel effects [1]. However, certain drawbacks of the TFET device, particularly its high average subthreshold swing (SS) and low on-state current, hamper the device´s performance [2]. Another problem with TFETs is that they exhibit ambipolar behavior, which leads to high I_off current [3]. To improve these characteristics simultaneously, we developed a novel TFET design with a tri-material-gate (TMG), and its properties were analyzed by numerical simulations.