• DocumentCode
    3102086
  • Title

    A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO2/Hf higher-k gate dielectric

  • Author

    Hong, Hao-Zhi ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao ; Li, Chen-Chien ; Hsu, Ya-Yin ; Wang, Tien-Ko

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Electrical characteristics and reliability of MOS devices with HfO2 or Ti/HfO2/Hf high-k dielectrics are studied and compared in this work. For the MOS device with Ti/HfO2/Hf gate dielectric stack after a PDA at 600°C, its equivalent oxide thickness (EOT) value is 7.1 Å and the leakage density is about 2.05 × 10-1A/cm2.
  • Keywords
    MIS devices; hafnium compounds; high-k dielectric thin films; leakage currents; titanium; EOT; MOS device; PDA; Ti-HfO2-Hf; electrical characteristics; equivalent oxide thickness; higher-k gate dielectric; leakage density; low gate leakage current; reliability; size 0.7 nm; temperature 600 degC; Dielectrics; Hafnium compounds; High K dielectric materials; Leakage current; Logic gates; MOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135388
  • Filename
    6135388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3102086