Effects of oxygen content and capping metal layer on bipolar switching properties of HfO2-based resistive random access memory devices

Author

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Chen, Ying-Chan ; Fu, Chung-Hao ; Liu, Li-Jung ; Wang, Tien-Ko

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

The HfO₂ based insulator is promising for resistive random access memory (RRAM). At first in this work, the effects of different oxygen contents in sputtered HfO₂ on resistive switching memory are investigated. It is observed that the oxygen flux rate would strongly affect the LRS/HRS current ratio and operation voltage. The switching behavior can be attributed to oxygen vacancy assisted conduction filament formation and annihilation. Then, the effects of Ti and Zr capping metal layers on RRAM devices with ALD-HfO₂ insulator are studied. Resistive switching behavior, temperature-dependence retention, and cycling endurance are strongly affected by the property of capping metal layer.

Keywords

hafnium compounds; oxygen; random-access storage; vacancies (crystal); HfO₂; LRS-HRS current ratio; RRAM; annihilation; bipolar switching properties; capping metal layer; conduction filament formation; cycling endurance; oxygen content; oxygen vacancy; resistive random access memory devices; resistive switching behavior; resistive switching memory; temperature-dependence retention; Argon; Hafnium compounds; Insulators; Resistance; Switches; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135389

Filename

6135389