• DocumentCode
    3102138
  • Title

    Improved characteristics of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack

  • Author

    Chen, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Ho, Ji-Jan ; Wang, Tien-Ko

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For better performance on charge-trapping(CT) flash device, tunneling layer stacks of nitrogen(N)-rich SiN/SiO2 and low temperature(LT) N-rich SiN/SiO2 are studied. The programming and erasing speeds of CT flash device are significantly improved by the tunneling layer stacks due to the lower conduction and valence band offsets of N-rich and LT N-rich SiN. The retention properties of CT flash devices with standard SiN trapping layer are satisfactory.
  • Keywords
    flash memories; silicon compounds; tunnelling; CT flash device; LT N-rich stack; SiN-SiO2; charge-trapping flash device; erasing speed; low-temperature nitrogen-rich stack; programming speed; retention properties; trapping layer; tunneling layer stacks; valence band offsets; Charge carrier processes; Educational institutions; Photonic band gap; Programming; Silicon compounds; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135390
  • Filename
    6135390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3102138