Nonlinear characterization techniques for improving accuracy of GaN HEMT model predictions in RF power amplifiers

In this paper, two vector nonlinear characterization procedures are presented, aimed at improving available GaN HEMT models for an accurate reproduction of the device behavior operating as a current source and in switched-mode RF power amplifiers. In the case of the more traditional linear amplifying classes, a technique for simultaneously extracting the higher order derivatives of the Ids(Vgs), Igs(Vgs) and Cgs(Vgs) transistor nonlinearities, along a desired load line, is described. This procedure conveniently isolates and models their contributions to the device intermodulation distortion (IMD) behavior. In the case of highly efficient switched-mode PAs, employed under drain modulation condition, a modified procedure for isodynamically measuring the higher order derivatives of the Vdd-to-AM and Vdd-to-PM amplifier profiles is put into consideration, as a way to refine the triode region reproduction for ON-OFF operation.