DocumentCode
3102349
Title
Annealing Effects on Properties of Pure and Iron Doped Nano-TiO2 Films Prepared by Reactive Magnetron Sputtering
Author
Zhang, Wenjie ; Li, Ruyuan ; Li, Ying ; Zhu, Shenglong ; Wang, Fuhui
Author_Institution
Sch. of Environ. & Chem. Eng., Shenyang Ligong Univ., Shenyang, China
fYear
2010
fDate
18-20 June 2010
Firstpage
1
Lastpage
4
Abstract
Pure and iron doped TiO2 films were prepared by means of pulsed DC reactive magnetron sputtering method using pure and mixed titanium and iron targets. The TiO2 films were deposited on microscope glass slides. The photocatalytic activity of the TiO2 films was evaluated by measuring the degradation rate of aqueous methyl orange on the films under UV irradiation. Structure properties of the films and the effects on photocatalytic properties after annealing were investigated. The films were adhered on the substrates properly before annealing, whereas cracks appeared on the annealed films as well as weaker adhesion between the films and the substrates. The films were still in the anatase phase after annealing below 700°C, accompanied with apparently enhanced XRD peak intensity, which indicated crystalline growth during annealing process. Phase transformation from anatase to rutile occurred when the films were annealed above 800°C. Photocatalytic activities of the films dropped drastically alone with increasing annealing temperature.
Keywords
X-ray diffraction; annealing; catalysis; solid-state phase transformations; sputter deposition; titanium compounds; ultraviolet spectra; SiO2; TiO2; UV irradiation; XRD; anatase phase; annealing effects; crystalline growth; degradation rate; iron doped nano films; microscope glass slides; phase transformation; photocatalytic activity; pulsed DC reactive magnetron sputtering; reactive magnetron sputtering; weaker adhesion; Adhesives; Annealing; Degradation; Glass; Iron; Magnetic properties; Microscopy; Sputtering; Titanium; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Bioinformatics and Biomedical Engineering (iCBBE), 2010 4th International Conference on
Conference_Location
Chengdu
ISSN
2151-7614
Print_ISBN
978-1-4244-4712-1
Electronic_ISBN
2151-7614
Type
conf
DOI
10.1109/ICBBE.2010.5515570
Filename
5515570
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