DocumentCode
3102410
Title
Wafer-scale graphene technology and GHz nanoelectronics (invited)
Author
Akinwande, Deji ; Parrish, Kristen N. ; Ramon, Michael E. ; Tao, Li ; Banerjee, Sanjay
Author_Institution
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
Graphene nanoelectronics have made significant progress over the past five years particularly in material synthesis, device physics, and circuit applications. The high achievable mobilities at room temperature coupled with its high linearity (or invariant-transconductance) [1], and transit frequencies that exceed conventional solid-state transistors (see Fig. 1) make it ideally suited for GHz and THz analog electronics [2]. However, there are several challenges that need to be addressed for graphene to be a next-generation technology. In this light, we report significant experimental and theoretical progress to address these challenges in three essential areas namely wafer-scale graphene synthesis, compact device modeling, and GHz analog circuits.
Keywords
analogue circuits; graphene; nanoelectronics; GHz nanoelectronics; THz analog electronics; circuit applications; conventional solid-state transistors; device physics; material synthesis; wafer-scale graphene technology; Analytical models; Contact resistance; Integrated circuit modeling; Quantum capacitance; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135403
Filename
6135403
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