• DocumentCode
    3102410
  • Title

    Wafer-scale graphene technology and GHz nanoelectronics (invited)

  • Author

    Akinwande, Deji ; Parrish, Kristen N. ; Ramon, Michael E. ; Tao, Li ; Banerjee, Sanjay

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Graphene nanoelectronics have made significant progress over the past five years particularly in material synthesis, device physics, and circuit applications. The high achievable mobilities at room temperature coupled with its high linearity (or invariant-transconductance) [1], and transit frequencies that exceed conventional solid-state transistors (see Fig. 1) make it ideally suited for GHz and THz analog electronics [2]. However, there are several challenges that need to be addressed for graphene to be a next-generation technology. In this light, we report significant experimental and theoretical progress to address these challenges in three essential areas namely wafer-scale graphene synthesis, compact device modeling, and GHz analog circuits.
  • Keywords
    analogue circuits; graphene; nanoelectronics; GHz nanoelectronics; THz analog electronics; circuit applications; conventional solid-state transistors; device physics; material synthesis; wafer-scale graphene technology; Analytical models; Contact resistance; Integrated circuit modeling; Quantum capacitance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135403
  • Filename
    6135403