DocumentCode :
3102445
Title :
Low-IRESET unipolar HfO2 RRAM and tunable resistive-switching mode via interface engineering
Author :
Lin, Kuan-Liang ; Hou, Tuo-Hung ; Lee, Yao-Jen ; Lin, Jun-Hung ; Chang, Jhe-Wei ; Shieh, Jiann ; Chou, Cheng-Tung ; Chang, Wen-Hsiung ; Jang, Wen-Yueh ; Lin, Chen-Hsi
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation nonvolatile memory (NVM) due to its low-voltage operation, fast switching speed and high-density integration [1]. Two common resistive switching (RS) modes in RRAM are unipolar and bipolar modes [2]. A unipolar RRAM in series with a rectifying diode, so-called one diode-one resistor (1D1R) cell, is particularly attractive for high-density applications because of the minimal 4F2 cell size [3]. However, high RESET current (IRESET) impedes the cell size scaling in 1D1R array. Recently, we have demonstrated a reliable Ni/HfO2/Si unipolar RRAM, fully compatible with the Si technology [4, 5]. In this paper, we show that unipolar HfO2 RRAM exhibits excellent NVM characteristics promising for low-IRESET, low-power operation in the future high-density 1D1R array. In addition, we show that the RS mode can be tailored by a bottom interfacial layer of Al2O3 between HfO2 and Si. New evidence on the location of filament connections/ruptures and RS mechanism will be discussed in details.
Keywords :
aluminium compounds; elemental semiconductors; hafnium compounds; integrated circuit reliability; low-power electronics; random-access storage; rectifying circuits; resistors; semiconductor diodes; silicon; Ni-HfO2-Al2O3-Si; RESET current; bipolar modes; cell size scaling; filament connections; high-density 1D1R array; high-density integration; interface engineering; low-IRESET unipolar RRAM; low-voltage operation; next-generation NVM; next-generation nonvolatile memory; one diode-one resistor; rectifying diode; resistive random access memory; resistive switching; tunable resistive-switching mode; unipolar RRAM reliability; Aluminum oxide; Electrodes; Hafnium compounds; Nickel; Random access memory; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135404
Filename :
6135404
Link To Document :
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