A Compact Diode Model for the Simulation of Fast Power Diodes including the Effects of Avalanche and Carrier Lifetime Zoning

Author

Bryant, A.T. ; Palmer, P.R. ; Santi, E. ; Hudgins, J.L.

Author_Institution

Dept. of Eng., Cambridge Univ.

fYear

2005

fDate

16-16 June 2005

Firstpage

2042

Lastpage

2048

Abstract

This paper presents the development and implementation of a compact diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It can be used in both circuit simulators and the formal optimisation of devices and circuits. A Fourier-based solution is used to solve the ambipolar diffusion equation (ADE) and describe the carrier dynamics. The model is shown to capture the required aspects of high-voltage diode recovery successfully, including the use of local lifetime control to eliminate snappy recovery

Keywords

Fourier analysis; avalanche diodes; carrier density; carrier lifetime; Fourier-based solution; ambipolar diffusion equation; avalanche effects; carrier density profile; carrier lifetime zoning; compact diode model; high-voltage diode recovery; power diodes; snappy recovery elimination; Charge carrier density; Charge carrier lifetime; Circuit simulation; Computational modeling; Equations; Power dissipation; Power engineering and energy; Power engineering computing; Semiconductor diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th

Conference_Location

Recife

Print_ISBN

0-7803-9033-4

Type

conf

DOI

10.1109/PESC.2005.1581913

Filename

1581913