Title :
A Compact Diode Model for the Simulation of Fast Power Diodes including the Effects of Avalanche and Carrier Lifetime Zoning
Author :
Bryant, A.T. ; Palmer, P.R. ; Santi, E. ; Hudgins, J.L.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
This paper presents the development and implementation of a compact diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It can be used in both circuit simulators and the formal optimisation of devices and circuits. A Fourier-based solution is used to solve the ambipolar diffusion equation (ADE) and describe the carrier dynamics. The model is shown to capture the required aspects of high-voltage diode recovery successfully, including the use of local lifetime control to eliminate snappy recovery
Keywords :
Fourier analysis; avalanche diodes; carrier density; carrier lifetime; Fourier-based solution; ambipolar diffusion equation; avalanche effects; carrier density profile; carrier lifetime zoning; compact diode model; high-voltage diode recovery; power diodes; snappy recovery elimination; Charge carrier density; Charge carrier lifetime; Circuit simulation; Computational modeling; Equations; Power dissipation; Power engineering and energy; Power engineering computing; Semiconductor diodes; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th
Conference_Location :
Recife
Print_ISBN :
0-7803-9033-4
DOI :
10.1109/PESC.2005.1581913
