Title :
Properties of InAs- and silicon-based ballistic spin field-effect transistors operated at elevated temperature
Author :
Osintsev, Dmitri ; Sverdlov, Viktor ; Makarov, Alexander ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Vienna Univ. of Technol., Vienna, Austria
Abstract :
Finally we study properties of a SpinFET built on a silicon fin. Following [4] the spin-orbit interaction is treated in the Dresselhaus form. A stronger dependence on the spin-orbit interaction parameter β for fins of [100] orientation is observed in Figure 5. Figure 6 shows that the TMR modulation is preserved in the SpinFET at higher temperatures. This may open the path towards constructing a silicon-based SpinFET operating at room temperature.
Keywords :
III-V semiconductors; elemental semiconductors; field effect transistors; indium compounds; silicon; Dresselhaus form; InAs; Si; SpinFET; TMR modulation; indium arsenic-based ballistic spin field-effect transistors; silicon fin; silicon-based ballistic spin field-effect transistors; spin-orbit interaction parameter; Educational institutions; Logic gates; Modulation; Silicon; Temperature; Transistors; Tunneling magnetoresistance;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135414
