Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates

Author

Tedesco, J.L. ; Zheng, W. ; Kirillov, O.A. ; Pookpanratana, S. ; Jang, H. -J ; Kavuri, P.P. ; Nguyen, N.V. ; Richter, C.A.

Author_Institution

Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiO_x [1] or TaO_x [2]. However, it is necessary to explore the memristive properties of other dielectric materials, because these dielectrics may have advantageous properties that have not yet been explored.

Keywords

X-ray photoelectron spectra; dielectric thin films; electrical resistivity; ellipsometry; hafnium compounds; memristors; optical microscopy; sol-gel processing; ultraviolet spectra; vacuum deposition; zirconium compounds; HfO₂; HfSiO₄; Si; X-ray photoelectron spectroscopy; XPS; ZrSiO₄; capacitance-frequency measurement; capacitance-voltage measurement; conductance- frequency measurement; current-voltage measurement; deep ultraviolet spectroscopic ellipsometry; dielectric films; flexible polyethylene teraphthalate substrates; memristors; optical microscopy; optical profilometry; resistive switching properties; silicon substrates; sol-gel synthesis; solution-processed thin films; temperature 293 K to 298 K; thermally evaporated aluminum contacts; Memristors; Optical device fabrication; Optical films; Optical imaging; Optical switches; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135416

Filename

6135416