Effects of triple blocking layers on operation performance in charge-trapping flash devices

Author

Ye, Zong-Hao ; Chang-Liao, Kuei-Shu ; Tsai, Jeng-Lin ; Wang, Tien-Ko

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Although retention characteristic of charge trapping (CT) flash device is improved by using Al₂O₃/HfO₂ blocking layer, the electron back tunneling (EBT) during erasing is still an issue. In order to overcome this issue, CT flash devices with triple blocking layers of either high/low/high (HLH) or low/high/low (LHL) electron energy barrier structures are proposed in this work. Programming, erasing, and retention characteristics of CT flash device can be enhanced by these triple blocking layers. In addition, CT flash device with Al₂O₃/HfAlO/Al₂O₃ triple blocking layer has the most excellent data retention and good programming speed.

Keywords

aluminium compounds; flash memories; hafnium compounds; tunnelling; Al₂O₃-HfAlO-Al₂O₃; CT flash device; EBT; HLH electron energy barrier structure; LHL electron energy barrier structure; blocking layer; charge-trapping flash devices; data retention; electron back tunneling; erasing characteristic; high-low-high electron energy barrier structure; low-high-low electron energy barrier structure; programming characteristic; programming speed; retention characteristic; triple-blocking layers; Aluminum oxide; Charge carrier processes; Current density; Hafnium compounds; Logic gates; Programming; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135420

Filename

6135420