DocumentCode
310331
Title
A macromodel for FLOTOX EEPROM
Author
Meng, Ming ; Noren, K.V.
Author_Institution
Intel Corp., Hillsboro, OR, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
39
Abstract
A macromodel for FLOTOX EEPROM cell is presented. The model is suitable for DC and transient simulations and programming/erasing cycles. The modeled characteristics include threshold voltage changes, drain current, tunneling current, and charge retention. Model simulations are presented and compared with measurement data available in the literature
Keywords
EPROM; SPICE; circuit analysis computing; digital simulation; integrated circuit modelling; transient analysis; tunnelling; DC simulation; FLOTOX EEPROM; SPICE; charge retention; drain current; macromodel; model simulation; programming/erasing cycles; threshold voltage changes; transient simulation; tunneling current; Capacitance; Character generation; Circuit simulation; Computational modeling; EPROM; Electrons; Microprocessors; Nonvolatile memory; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.594022
Filename
594022
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