Title :
The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics
Author :
Valin, R. ; Seoane, N. ; Aldegunde, M. ; Garcia-Loureiro, A.
Author_Institution :
Dept. de Electron. e Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain
Abstract :
The next substitution of the Enabling Grids for E-sciencE project (EGEE) in 2010 by the European Grid Initiative (EGI), where grid infrastructure of each country will be run by National Grid Initiatives (NGI), is giving a boost to the NGI development. In this context, the Spanish National Grid Initiative (es-NGI) is being developed by the e-science Spanish network. The es-NGI is developing virtual organizations where common area applications are associated. In this context, the MOSFET virtual organisation (VO-MOSFET) was born in 2009 to perform semiconductor device simulations using the es-NGI infrastructure. This virtual organization is supported by the es-NGI resource centres and it is developing a job submission and monitoring system independent of the grid middleware. In this paper a general description of the VO-MOSFET and some application level utilities of the job submission system are presented. Furthermore, a gridification example of a nanoelectronic simulation is presented proving the grid benefits for the field of nanoelectronic simulation.
Keywords :
MOSFET; electronic engineering computing; grid computing; middleware; nanoelectronics; semiconductor device models; Enabling Grids for E-sciencE project; European Grid Initiative; MOSFET virtual organisation; National Grid Initiatives; Spanish National Grid Initiative; VO-MOSFET; escience Spanish network; grid computing; grid middleware; job submission system; monitoring system; nanoelectronics simulation; semiconductor device simulations; Computational modeling; Condition monitoring; Context modeling; Fabrication; Grid computing; MOSFET circuits; Manufacturing processes; Middleware; Nanoelectronics; Semiconductor devices; DG-SOI MOSFET; EGI; Grid computing; Monte Carlo Simulation; NGI-es; Nanoelectronics;
Conference_Titel :
e-Science, 2009. e-Science '09. Fifth IEEE International Conference on
Conference_Location :
Oxford
Print_ISBN :
978-0-7695-3877-8
DOI :
10.1109/e-Science.2009.45