A 1 V multi-gigahertz RF mixer core in 0.5 /spl mu/m CMOS

This RF down conversion mixer core uses a mechanism different from those used in mixer designs. Here, mixing is in a single MOS transistor by applying RF and local oscillator (LO) signals to the front-gate and the back-gate of the device, respectively. Problems normally associated with integrated active mixers are avoided. No explicit signal conversion takes place at RF in this circuit and there is no internal node or path (other than ports directly driven by RF or LO) where desired signal is at RF. The effect of parasitics is minimized. Consequently, the conversion gain can be increased significantly. With no stack-up circuit components, supply voltage is reduced, enabling operation at 1 V with a standard threshold voltage process. By reducing circuit complexity along the RF signal path, effects of noise, loss, and leakage are minimized.