Title :
A promising technology of Schottky diode based on 4H-SiC for high temperature application
Author :
Pascu, R. ; Craciunoiu, F. ; Kusko, Mihai
Author_Institution :
Lab. of Nanobiotechnol., Nat. Inst. for R&D in Microtechnol., Bucharest, Romania
Abstract :
A Schottky diode technology based on silicon carbide (SiC) with ramp oxide termination is presented. The improvement of the Schottky, respectively ohmic contact is conditioned by a rapid thermal processing to form Ni-silicide. The Schottky diodes (SD) have been electrical characterized in forward bias in range of temperature 300-573 K to verify their capacity to operate like temperature sensors. The results show an improvement of the electrical parameters with increasing of the temperature.
Keywords :
Schottky diodes; nickel compounds; ohmic contacts; silicon compounds; temperature sensors; NiSi; SD; Schottky diode technology; SiC; electrical parameters; forward bias; high temperature application; ohmic contact; ramp oxide termination; rapid thermal processing; temperature 300 K to 573 K; temperature sensors; Nickel; Schottky diodes; Silicon carbide; Temperature distribution; Temperature measurement; Temperature sensors; Schottky Barrier Height; Schottky diode; SiC; high temperature; ramp oxide termination; temperature sensor;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on
Conference_Location :
Villach
Print_ISBN :
978-1-4673-4580-4
DOI :
10.1109/PRIME.2013.6603182
