A promising technology of Schottky diode based on 4H-SiC for high temperature application

Author

Pascu, R. ; Craciunoiu, F. ; Kusko, Mihai

Author_Institution

Lab. of Nanobiotechnol., Nat. Inst. for R&D in Microtechnol., Bucharest, Romania

fYear

2013

fDate

24-27 June 2013

Firstpage

297

Lastpage

300

Abstract

A Schottky diode technology based on silicon carbide (SiC) with ramp oxide termination is presented. The improvement of the Schottky, respectively ohmic contact is conditioned by a rapid thermal processing to form Ni-silicide. The Schottky diodes (SD) have been electrical characterized in forward bias in range of temperature 300-573 K to verify their capacity to operate like temperature sensors. The results show an improvement of the electrical parameters with increasing of the temperature.

Keywords

Schottky diodes; nickel compounds; ohmic contacts; silicon compounds; temperature sensors; NiSi; SD; Schottky diode technology; SiC; electrical parameters; forward bias; high temperature application; ohmic contact; ramp oxide termination; rapid thermal processing; temperature 300 K to 573 K; temperature sensors; Nickel; Schottky diodes; Silicon carbide; Temperature distribution; Temperature measurement; Temperature sensors; Schottky Barrier Height; Schottky diode; SiC; high temperature; ramp oxide termination; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603182

Filename

6603182