Title :
A statistical approach to characterizing the reliability of systems utilizing HBT devices
Author :
Chen, Yuan ; Wang, Qing ; Kayali, Sammy
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper presents a statistical approach for characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the individual HBT devices, along with an analysis of the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.
Keywords :
critical path analysis; heterojunction bipolar transistors; semiconductor device reliability; statistical analysis; statistical distributions; HBT device statistical reliability information; HBT system-level reliability; statistical reliability estimation method; system critical path analysis; worst-case method; Bipolar transistors; Equations; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Information analysis; Laboratories; Life estimation; Propulsion; Temperature;
Conference_Titel :
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0105-1
DOI :
10.1109/ROCS.2004.184336
