DocumentCode
3105236
Title
A statistical approach to characterizing the reliability of systems utilizing HBT devices
Author
Chen, Yuan ; Wang, Qing ; Kayali, Sammy
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2004
fDate
24 Oct. 2004
Firstpage
3
Lastpage
7
Abstract
This paper presents a statistical approach for characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the individual HBT devices, along with an analysis of the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.
Keywords
critical path analysis; heterojunction bipolar transistors; semiconductor device reliability; statistical analysis; statistical distributions; HBT device statistical reliability information; HBT system-level reliability; statistical reliability estimation method; system critical path analysis; worst-case method; Bipolar transistors; Equations; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Information analysis; Laboratories; Life estimation; Propulsion; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN
0-7908-0105-1
Type
conf
DOI
10.1109/ROCS.2004.184336
Filename
1424927
Link To Document