A new method to measure temperature- and power-dependent thermal resistance of HBTs

Author

Menozzi, R. ; Barrett, J. ; Ersland, P.

Author_Institution

Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy

fYear

2004

fDate

24 Oct. 2004

Firstpage

33

Lastpage

44

Abstract

This paper introduced a new DC technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard I_C-V_CE measurements at different baseplate temperatures, and it is able to account for the dependence of the thermal resistance on both the base-plate temperature and the dissipated power. We have obtained and shown consistent results extracted from devices with emitter area ranging from 90 μm² (1 finger) to 1080 μm² (12 fingers).

Keywords

electric current measurement; heterojunction bipolar transistors; semiconductor device measurement; thermal resistance measurement; voltage measurement; DC technique; GaAs; HBT finger number; I_C-V_CE measurements; baseplate temperature; dissipated power thermal resistance dependence; emitter area; power-dependent thermal resistance; temperature-dependent thermal resistance; Calibration; Electrical resistance measurement; Heterojunction bipolar transistors; Phase measurement; Power measurement; Surface resistance; Temperature dependence; Temperature distribution; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2004.[Reliability of Compound Semiconductors]

Print_ISBN

0-7908-0105-1

Type

conf

DOI

10.1109/ROCS.2004.184343

Filename

1424934