Title :
A new method to measure temperature- and power-dependent thermal resistance of HBTs
Author :
Menozzi, R. ; Barrett, J. ; Ersland, P.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Abstract :
This paper introduced a new DC technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard IC-VCE measurements at different baseplate temperatures, and it is able to account for the dependence of the thermal resistance on both the base-plate temperature and the dissipated power. We have obtained and shown consistent results extracted from devices with emitter area ranging from 90 μm2 (1 finger) to 1080 μm2 (12 fingers).
Keywords :
electric current measurement; heterojunction bipolar transistors; semiconductor device measurement; thermal resistance measurement; voltage measurement; DC technique; GaAs; HBT finger number; IC-VCE measurements; baseplate temperature; dissipated power thermal resistance dependence; emitter area; power-dependent thermal resistance; temperature-dependent thermal resistance; Calibration; Electrical resistance measurement; Heterojunction bipolar transistors; Phase measurement; Power measurement; Surface resistance; Temperature dependence; Temperature distribution; Temperature measurement; Thermal resistance;
Conference_Titel :
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0105-1
DOI :
10.1109/ROCS.2004.184343
