Title :
Reliability of GaAs PIN switches for high frequency and high power applications
Author :
Yang, Xinxing ; Ersland, Peter ; Hoag, David
Author_Institution :
Tyco Electron., Lowell, MA, USA
Abstract :
M/A-COM´s monolithic GaAs PIN diode integrated circuit process has been used in high frequency switching applications for many years. A recent application of this process identified a unique failure mode related to operation at high RF power and low frequency. Under these high power conditions, switch insertion loss was seen to increase, particularly at lower frequencies (below 10 GHz). In an effort to better understand this failure mode, a series of reliability experiments were performed. Subsequent changes to this process were also subjected to process reliability tests.
Keywords :
III-V semiconductors; gallium arsenide; life testing; microwave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; semiconductor device testing; 125 degC; GaAs; high frequency PIN switches; high power PIN diodes; life tests; low frequency failure mode; reliability testing; switch insertion loss; Application specific integrated circuits; Gallium arsenide; Insertion loss; Integrated circuit reliability; Monolithic integrated circuits; Radio frequency; Radiofrequency identification; Switches; Switching circuits; Testing;
Conference_Titel :
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0105-1
DOI :
10.1109/ROCS.2004.184354
