Title :
The high mobility a-plane GaN film grown with flow-rate modulation epitaxy
Author :
Wu, Chan-Shou ; Liang, Tsair-Chun ; Cheng, Wei-Chih
Author_Institution :
Grad. Inst. of Electro-Opt. Eng., Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung, Taiwan
Abstract :
A-plane n-GaN film has been grown on r-plane sapphire substrate by MOCVD with flow-rate modulation (FME). Under the used growth conditions, the optimized FME parameters include the on/off periods at 60/80 s. With the FME technique, the n-GaN film has a high Hall mobility of 779 cm2/V-s.
Keywords :
Hall mobility; III-V semiconductors; MOCVD coatings; gallium compounds; wide band gap semiconductors; Hall mobility; MOCVD; flow-rate modulation epitaxy; high mobility a-plane film; r-plane sapphire substrate; Dielectric substrates; Diode lasers; Electrooptic modulators; Epitaxial growth; Gallium nitride; Hall effect; Light emitting diodes; MOCVD; Temperature; X-ray scattering;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5213220
