Title :
Quantum centroid modeling for surrounding gate MOSFETs
Author :
Vimala, P. ; Balamurugan, N.B.
Author_Institution :
Dept. of ECE, Thiagarajar Coll. of Eng., Madurai, India
Abstract :
The present analysis proposes an analytical model of gate-all-around/surrounding gate (GAA/SG) MOSFETs for centroid including quantum mechanical (QM) effects. To obtain the QM effects of SGT, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid. The accuracy of the model is verified by comparing the data obtained by Simulations.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; quantum theory; semiconductor device models; Schrodinger equations; coupled Poisson equations; gate-all-around MOSFET; inversion charge centroid; inversion charge distribution function; quantum centroid modeling; quantum mechanical effects; surrounding gate MOSFET; Decision support systems; Intelligent systems; Logic gates; MOSFETs; Performance evaluation; Schrodinger equation; Silicon; Centroid; Quantum effects; Surrounding Gate; Variational approach;
Conference_Titel :
Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4699-3
DOI :
10.1109/CODIS.2012.6422163
