Title :
GaAs ≪110≫ nanowires: Planar, self-aligned, twin-free, high-mobility and transfer-printable
Author :
Fortuna, Seth A. ; Chun, Ik Su ; Wen, Jianguo ; Dowdy, Ryan ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We present <110> planar, self-aligned, twin-free, and high mobility GaAs semiconductor nanowires grown on (100) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and naturally integratable with existing processing technology and photonic and electronic device designs.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; nanowires; GaAs; high-mobility nanowire; planar nanowire; self-aligned nanowire; semiconductor nanowire; transfer printable nanowire; twin-free nanowire; Gallium arsenide; Gold; III-V semiconductor materials; MESFETs; MOCVD; Morphology; Nanotechnology; Nanowires; Substrates; Temperature control;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5213280
